052-6345 rev d 7 - 2011 absolute maximum ratings thermal and mechanical characteristics symbol parameter ratings unit v ces collector emitter voltage 900 v i c1 continuous collector current @ t c = 25c 78 a i c2 continuous collector current @ t c = 100c 43 i cm pulsed collector current 1 129 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 337 w ssoa switching safe operating area @ t j = 150c 129a @ 900v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications zvs phase shifted and other full bridge half bridge high power pfc boost welding ups, solar, and other inverters high frequency, high ef? ciency industrial features fast switching with low emi very low e off for maximum ef? ciency ultra low c res for improved noise immunity low conduction loss low gate charge increased intrinsic gate resistance for low emi rohs compliant APT43GA90BD30 apt43ga90sd30 900v power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ? ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excellent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) - - 0.37 c/w r jc junction to case thermal resistance (diode) - - 0.80 w t package weight - 5.9 - g torque mounting torque (to-247 package), 4-40 or m3 screw 10 inlbf microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci? ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 1.0ma 900 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 25a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i ges gate-emitter leakage current v gs = 30v 100 na t o -2 4 7 g c e d 3 pa k g c e (s) (b) downloaded from: http:///
052-6345 rev d 7 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. see mil-std-750 method 3471 3 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 4 e on1 is the inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on switching loss. it is measured by clamping the inductance with a silicon carbide schottky diode.5 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. apt43ga90bd_sd30 symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 2465 pf c oes output capacitance 227 c res reverse transfer capacitance 34 q g 2 total gate charge gate charge v ge = 15v v ce = 450v i c = 25a 116 q ge gate-emitter charge 18 nc q gc gate- collector charge 44 ssoa switching safe operating area t j = 150c, r g = 4.7 , v ge = 15v, l= 100uh, v ce = 900v 129 a t d(on) turn-on delay time inductive switching (25c) v cc = 600v v ge = 15v i c = 25a r g = 4.7 3 t j = +25c 12 ns t r current rise time 16 t d(off) turn-off delay time 82 t f current fall time 57 e on2 turn-on switching energy 875 j e off 5 turn-off switching energy 425 t d(on turn-on delay time inductive switching (125c) v cc = 600v v ge = 15v i c = 25a r g = 4.7 3 t j = +125c 12 ns t r current rise time 16 t d(off) turn-off delay time 117 t f current fall time 129 e on2 turn-on switching energy 1646 j e off 5 turn-off switching energy 800 downloaded from: http:///
052-6345 rev d 7 - 2011 typical performance curves apt43ga90bd_sd30 0 20 40 60 80 100 120 25 50 75 100 125 150 0 1 2 3 4 5 6 0 50 100 150 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 6 8 10 12 14 16 0 50 100 150 200 250 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 0 5 10 15 20 25 30 0 50 100 150 200 250 0 5 10 15 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 12.5a i c = 25a i c = 50a i c = 25a i c = 50a 13v 5v 15v i c = 25a t j = 25c v ce = 720v v ce = 450v v ce = 180v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 8v i c = 12.5a 9v 10v 11v 12v downloaded from: http:///
052-6345 rev d 7 - 2011 typical performance curves apt43ga90bd_sd30 0 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 0 10 20 30 40 50 0 400 800 1200 1600 2000 2400 0 10 20 30 40 50 0 500 1000 1500 2000 2500 3000 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 0 50 100 150 200 0 10 20 30 40 50 4 6 8 10 12 14 16 0 10 20 30 40 50 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 600v r g = 4.7 l = 100 h v ce = 600v v ge = +15v r g = 4.7 v ce = 600v t j = 25c , or 125c r g = 4.7 l = 100 h v ge = 15v v ce = 600v v ge = +15v r g = 4.7 v ce = 600v v ge = +15v r g = 4.7 r g = 4.7 , l = 100 h, v ce = 600v t j = 125c t j = 25c t j = 125c t j = 25c r g = 4.7 , l = 100 h, v ce = 600v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 50a e off, 25a e on2, 25a e off, 12.5a e on2, 12.5a v ce = 600v v ge = +15v t j = 125c e on2, 50a e off, 25a e on2, 50a e off, 25a e on2, 12.5a e off, 12.5a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) e on2, 50a downloaded from: http:///
052-6345 rev d 7 - 2011 typical performance curves apt43ga90bd_sd30 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 10 -5 10 -4 10 -3 10 -2 0.1 1 0 200 400 600 800 10 100 1000 10000 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 c oes c res c ies peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 200 1 10 100 1000 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6345 rev d 7 - 2011 figure 21, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 22, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt30dq120 figure 20, inductive switching test circuit apt43ga90bd_sd30 downloaded from: http:///
052-6345 rev d 7 - 2011 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -5 10 -4 10 -3 10 -2 0.1 1 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery rectifier diode symbol characteristic / test conditions apt43ga90bd_sd30 unit i f(av) maximum average forward current (t c = 117c, duty cycle = 0.5) 30 amps i f(rms) rms forward current (square wave, 50% duty) 46 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 320 symbol characteristic / test conditions min type max unit v f forward voltage i f = 30a 2.5 volts i f = 60a 3.1 i f = 30a, t j = 125c 1.9 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s , v r = 30v, t j = 25 c - 24 - ns t rr reverse recovery time i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 25 c - 295 - q rr reverse recovery charge - 440 - nc i rrm maximum reverse recovery current - 4 - amps t rr reverse recovery time i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 125 c - 330 -n s q rr reverse recovery charge - 1550 - nc i rrm maximum reverse recovery current - 8 - amps t rr reverse recovery time i f = 30a, di f /dt = -1000a/ s v r = 667v, t c = 125 c - 150 - ns q rr reverse recovery charge - 2250 -n c i rrm maximum reverse recovery current - 25 - amps z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 23. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
052-6345 rev d 7 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed apt43ga90bd_sd30 0 10 20 30 40 50 60 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 1200 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 4000 0 200 400 600 800 1000 1200 0 100 200 300 400 500 0 200 400 600 800 1000 0 20 40 60 80 100 0 1 2 3 4 5 t j = 175c t j = 25c v f , anode-to-cathode voltage (v) figure 24, forward current vs. forward voltage i f , forward current (a) t j = 125c -di f /dt, current rate of change (a/ s ) figure 25, reverse recovery time vs. current rate of change t rr , reverse recovery time (ns) -di f /dt, current rate of change (a/ s ) figure 26, reverse recovery change vs. current rate of change q rr , reverse recovery change (nc) t j , junction temperature (c) figure 28, dynamic parameters vs. junction temperature k f , dynamic parameters (normalized to 1000a/ s) -di f /dt, current rate of change (a/ s ) figure 27, reverse recovery current vs. current rate of change v ge , gate-to-emitter voltage (v) case temperature (c) figure 29, maximum average forward current vs. case temperature i f(av) (a) 0 20 40 60 80 100 120 140 160 1 10 100 200 v r , reverse voltage figure 30, junction capacitance vs. reverse voltage c j , junction capacitance (pf) t j = -55c t j = 125 c v r = 667v 15a 30a 60a 60a 15a 30a t j = 125 c v r = 667v t j = 125 c v r = 667v 60a 30a 15a t rr q rr q rr t rr i rrm duty cycle = 0.5 t j = 175 c downloaded from: http:///
052-6345 rev d 7 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed apt43ga90bd_sd30 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) collector collector emitter gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead ) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 (cathode) (anode) (cathode) (cathode) (anode) (cathode) figure 32. diode reverse recovery waveform de? nition figure 31. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 d 3 pak package outline e1 sac: tin, silver, copper e3 sac: tin, silver, copper to-247 package outline 1.016 (.040) dimensions in millimeters (inches) dimensions in millimeters (inches) downloaded from: http:///
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